Bipolar Junction Transistors (Graph) | Generated by AI

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BJT Characteristics and Operation Output Characteristics (Ic vs Vce) Collector-Emitter Voltage (Vce) Collector Current (Ic) 0 0.2V 0.5V 1V 3V 0 5mA 10mA 15mA 20mA IB = 0 IB = 20µA IB = 40µA IB = 60µA Saturation Active Region Cutoff Transfer Characteristics (Ic vs Ib) Base Current (Ib) Collector Current (Ic) 0 20µA 40µA 60µA 80µA 0 5mA 10mA 15mA 20mA β = ΔIc/ΔIb ≈ 100 NPN Transistor Operation Base (B) Control Collector (C) Emitter (E) IB (small) IC (large) IE = IB + IC Current Gain: β = IC/IB (typically 50-200) BJT Operating Regions Cutoff IB ≈ 0, IC ≈ 0 Active Amplification Saturation Switch ON BE: Reverse BC: Reverse BE: Forward BC: Reverse BE: Forward BC: Forward BE = Base-Emitter Junction BC = Base-Collector Junction
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